View AO4404_216197.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

July 2001
AO4404 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
VDS (V) = 30V ID = 8.5A RDS(ON) < 24m (VGS = 10V) RDS(ON) < 30m (VGS = 4.5V) RDS(ON) < 48m (VGS = 2.5V)
D S S S G D D D D
G S
SOIC-8
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Maximum VDS 30 Drain-Source Voltage VGS 12 Gate-Source Voltage Continuous Drain TA=25C 8.5 A Current 7.1 TA=70C ID Pulsed Drain Current B TA=25C TA=70C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C IDM PD TJ, TSTG 60 3 2.1 -55 to 150
Units V V A
W C
Symbol
A A
t 10s Steady-State Steady-State
RJA RJL
Typ 31 59 16
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4404
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=8.5A TJ=125C 0.7 40 1 20.5 30 25 40 16 0.71 Min 30 1 5 100 1.4 24 36 30 48 1 4.3 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
VGS=4.5V, ID=8.5A VGS=2.5V, ID=5A VDS=5V, ID=5A Forward Transconductance IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current
10
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Crss Gate resistance Rg SWITCHING PARAMETERS Qg Total Gate Charge Gate Source Charge Qgs Qgd Gate Drain Charge tD(on) Turn-On DelayTime Turn-On Rise Time tr tD(off) Turn-Off DelayTime Turn-Off Fall Time tf trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
857 97 71 1.4 9.7 1.63 3.1 14 4 33 5 15 8.6
VGS=4.5V, VDS=15V, ID=8.5A
VGS=10V, VDS=15V, RL=1.8, RGEN=6 IF=5A, dI/dt=100A/s IF=5A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 25 20 ID (A) 15 10 5 VGS=1.5V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 60 50 RDS(ON) (m) 40 30 20 VGS=10V 10 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance 1.8 1.6 VGS=4.5V 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V VGS=2.5V 0 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 10V 20 3V 4.5V 2.5V 12 ID(A) 8 2V 4 125C 25C 16 VDS=5V
VGS=2.5V
VGS=4.5V
100 90 80 RDS(ON) (m) 70 60 50 40 30 20 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C IS (A) ID=5A
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C
125C
Alpha and Omega Semiconductor, Ltd.
AO4404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 200 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics VDS=15V ID=8.5A Capacitance (pF) 1400 1200 1000 800 600 400 Coss Crss Ciss
100.0 RDS(ON) limited 10.0 ID (Amps) 100s 1ms Power (W) 10ms 0.1s 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 TJ(Max)=150C TA=25C
50 40 30 20 10 0 0.001 TJ(Max)=150C TA=25C
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton
Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1
T 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Package Data
DIMENSIONS IN MILLIMETERS SYMBOLS
DIMENSIONS IN INCHES
A A1 A2 b c D E1 e E h L aaa
MIN 1.45 0.00 --- 0.33 0.19 4.80 3.80 5.80 0.25 0.40 --- 0
NOM 1.50 --- 1.45 --- --- --- --- 1.27 BSC --- --- --- --- ---
MAX 1.55 0.10 --- 0.51 0.25 5.00 4.00 6.20 0.50 1.27 0.10 8
MIN 0.057 0.000 --- 0.013 0.007 0.189 0.150 0.228 0.010 0.016 --- 0
NOM 0.059 --- 0.057 --- --- --- --- 0.050 BSC --- --- --- --- ---
MAX 0.061 0.004 --- 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8
NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
NOTE: LOGO - AOS LOGO 4404 - PART NUMBER CODE. F - FAB LOCATION A - ASSEMBLY LOCATION Y - YEAR CODE W - WEEK CODE. LN - ASSEMBLY LOT CODE
SO-8 PART NO. CODE
UNIT: mm
PART NO. AO4404
CODE 4404
Rev. A
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Carrier Tape
SO-8 Tape and Reel Data
SO-8 Reel
SO-8 Tape
Leader / Trailer & Orientation

▲Up To Search▲

Price & Availability of AO4404

	To Download AO4404 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .